Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	743

Overview

Title:  Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H Scope:  This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each encapsulated device type (JANTXV and JANS) as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for unencapsulated devices, JANHC and JANKC die versions. Status:  Active Document Date:  12-JUL-2021         Next Review Due:  11-JUL-2026 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Projects

Project Number:     5961-2026-017

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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