Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	732

Overview

Title:  Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, Through-Hole and Surface Mount, Types 2N7519 and 2N7520, Quality Levels JANTXV and JANS Scope:  This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV and JANS product assurance levels. Status:  Active Document Date:  09-JUL-2021         Next Review Due:  08-JUL-2026 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

Click on column headings for a description of column content.

NOTE: It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance; older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases.