Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	713

Overview

Title:  Transistor, Field Effect, Radiation Hardened, P-Channel, Silicon, Device Types 2N7549, and 2N7550, JANTXVR, F and JANSR, F Scope:  This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. Provisions for radiation hardness assurance (RHA) to three radiation levels ("R", “F”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions. Status:  Active Document Date:  18-NOV-2021         Next Review Due:  17-NOV-2026 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Weapons Support (Columbus)     Preparing Activity: CC  DLA Weapons Support (Columbus) Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Weapons Support (Columbus)   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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