Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	664

Overview

Title:  Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H Scope:  This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions. See 6.8 for through hole mount versions. Status:  Active Document Date:  23-AUG-2022         Next Review Due:  22-AUG-2027 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Weapons Support (Columbus)     Preparing Activity: CC  DLA Weapons Support (Columbus) Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Weapons Support (Columbus)   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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