Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	663

Overview

Title:  Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H Scope:  This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for and JANHC and JANKC die versions. See 6.8 for surface mount versions. Status:  Active Document Date:  23-AUG-2022         Next Review Due:  22-AUG-2027 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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