Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	658

Overview

Title:  Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438 and 2N7439 JANSD and JANSR (No S/S Document) Scope:  This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor intended for use in high density power switching applications. Status:  Canceled Cancellation Date:  18-AUG-2021       FSC/Area:  5961 Doc Category:   Performance Specification

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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