Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	630

Overview

Title:  Transistor, Field Effect, Radiation Hardened P-Channel, Silicon, Types 2N7389 and 2N7390, JANTXV, R, and F and JANS, R, and F Scope:  This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV and JANS product assurance levels. See 6.6 for JANHC and JANKC die versions. Status:  Active Document Date:  25-JAN-2024         Next Review Due:  23-JAN-2029 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Weapons Support (Columbus)     Preparing Activity: CC  DLA Weapons Support (Columbus) Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  EC   Naval Information Warfare Systems Command   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Weapons Support (Columbus)   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

Click on column headings for a description of column content.

NOTE: It is recommended that you use Adobe Reader v7.0 or higher for optimal download performance; older versions should continue to work, but downloading large files may appear to take longer, so please be patient in those cases.