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Overview
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Title:
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Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
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Scope:
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This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided each unencapsulated device type.
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Status:
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Active
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Document Date:
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24-JUN-2022
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Next Review Due:
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23-JUN-2027
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FSC/Area:
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5961
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Doc Category:
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Performance Specification
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QPL/QML:
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QML-19500-31 NOT 1
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Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.
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Revision History
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Click on column headings for a description of column content.
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 | Revision R | A | 24-JUN-2022 | 32 | 724.3 KB |
 | Revision P Amendment 1 (amendment incorporated) | A | 22-OCT-2018 | 31 | 682.5 KB |
 | Revision P | A | 09-MAR-2018 | 31 | 553.7 KB |
 | Revision N | A | 15-MAY-2014 | 25 | 298.4 KB |
 | Revision M | A | 14-OCT-2013 | 26 | 413.6 KB |
 | Revision L | A | 07-AUG-2008 | 26 | 249.4 KB |
 | Revision K | A | 08-NOV-2006 | 18 | 137.8 KB |
 | Revision J | A | 07-APR-2004 | 22 | 122.2 KB |
 | Revision H | A | 30-DEC-2002 | 22 | 127.7 KB |
 | Revision G | A | 18-OCT-2001 | 21 | 122.2 KB |
 | Revision F Amendment 1 | A | 24-OCT-2000 | 1 | 3.3 KB |
 | Revision F | A | 21-APR-1999 | 17 | 120.1 KB |
 | Revision E Amendment 1 | A | 02-JUN-1995 | 1 | 73.8 KB |
 | Revision E | A | 31-AUG-1994 | 18 | 1069.0 KB |
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