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Overview
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Title:
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Semiconductor Device, Thyristor (Controlled Rectifier), Silicon Types 2N3027 through 2N3032, and TX2N3027 through TX2N3032
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Scope:
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This specification covers the detail requirements for silicon, PNPN, thyristors for application particularly as controlled rectifier, reverse-blocking triode devices in compatible electronic-equipment circuits. (See 3.2, 3.4, and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.
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Status:
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Inactive
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Document Date:
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03-MAY-2021
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Next Review Due:
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01-MAY-2031
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FSC/Area:
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5961
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Doc Category:
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Detail Specification
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Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.
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Revision History
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Click on column headings for a description of column content.
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 | Notice 4 - Validation | A | 03-MAY-2021 | 1 | 2.0 KB |
 | Notice 3 - Validation | A | 08-JUL-2011 | 1 | 2.0 KB |
 | Notice 2 - Validation | A | 24-MAR-2004 | 1 | 2.3 KB |
 | Notice 1 - Inactivation | A | 07-JUN-1999 | 1 | 29.7 KB |
 | Amendment 2 | A | 29-JUN-1990 | 2 | 102.9 KB |
 | Amendment 1 | A | 21-MAY-1969 | 1 | 39.6 KB |
 | Base Document | A | 15-MAR-1969 | 33 | 1900.2 KB |
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