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Overview
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Title:
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Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R, and A-Versions, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
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Scope:
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This specification covers the performance requirements for 12 and 20 ampere, silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type.
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Status:
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Active
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Document Date:
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15-AUG-2024
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Next Review Due:
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14-AUG-2029
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FSC/Area:
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5961
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Doc Category:
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Performance Specification
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QPL/QML:
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QML-19500-31 NOT 1
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Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.
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Revision History
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Click on column headings for a description of column content.
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 | Revision F Amendment 1 (amendment incorporated) | A | 15-AUG-2024 | 20 | 375.5 KB |
 | Revision F | A | 17-APR-2019 | 20 | 487.9 KB |
 | Revision E Notice 1 - Validation | A | 05-JUL-2016 | 1 | 2.1 KB |
 | Revision E | A | 20-SEP-2011 | 17 | 281.5 KB |
 | Revision D Notice 1 - Validation | A | 05-AUG-2004 | 1 | 2.4 KB |
 | Revision D Amendment 1 | A | 12-OCT-1999 | 2 | 6.7 KB |
 | Revision D | A | 15-AUG-1999 | 19 | 110.8 KB |
 | Revision C Amendment 3 | A | 31-MAR-1994 | 6 | 353.9 KB |
 | Revision C | A | 06-JUN-1989 | 26 | 1553.1 KB |
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