Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	615

Overview

Title:  Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and  JANS M, D, R, and  F Scope:  This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("M", "D", "R" and "F") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions. Status:  Active Document Date:  25-SEP-2023         Next Review Due:  23-SEP-2028 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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