Document ID:	MIL-PRF-19500       Scroll down to access document images
Spec/Std Sheet:	603

Overview

Title:  Transistor, Field Effect Radiation Hardened (Total Dose Only), N-Channel, Silicon, (Through-Hole, Surface Mount, And Carrier Board Packages), Types 2N7268, 2N7269, 2N7270, 2N7394, Jantxvr, F, G, H; Jansr, F, G, And H Scope:  This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions. Status:  Active Document Date:  26-JUL-2024         Next Review Due:  25-JUL-2029 FSC/Area:  5961 Doc Category:   Performance Specification   QPL/QML:  QML-19500-31 NOT 1

Responsibilities

Lead Standardization Activity:  CC  DLA Land and Maritime     Preparing Activity: CC  DLA Land and Maritime Coordination:  Full   Army Custodian:  CR   US Army Combat Capabilities Development Command, C5ISR Center   Navy Custodian:  SH   Naval Sea Systems Command (Ship Systems)   Air Force Custodian:  85   Air Force Life Cycle Management Center - Electronic Components, Wire and Ca   DLA Custodian:  CC   DLA Land and Maritime   Other Custodian:  NA   National Aeronautics and Space Administration (NASA)

Amendments to military specifications or specification sheets issued after August 1, 2003 are incorporated in the modified document.

Revision History

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